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KSC2883 KSC2883 Low Frequency Power Amplifier * 3W Output Application * Collector Dissipation : PC=1~2W in Mounted on Ceramic Board * Complement to KSA1203 1 SOT-89 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC PC* TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Value 30 30 5 1.5 0.3 500 1,000 150 -55 ~ 150 Units V V V A A mW mW C C * Mounted on Ceramic Board (250mm2x0.8mm) Electrical Characteristics Ta=25C unless otherwise noted Symbol BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (on) fT Parameter Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC=10A, IB=0 IE=1mA, IC=0 VCB=30V, IE=0 VBE=5V, IC=0 VCE=2V, IC=500mA IC=1.5A, IB=30mA VCE=2V, IC=500mA VCE=2V, IC=500mA VCB=10V, IE=0, f=1MHz 120 40 100 Min. 30 5 100 100 320 2.0 1.0 V V MHz pF Typ. Max. Units V V nA nA Cob hFE Classification Classification hFE O 100 ~ 200 Marking Y 160 ~ 320 SHX hFE grade (c)2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC2883 Typical Characteristics 1.6 1.6 IB = 10mA IB = 8mA 1.4 VCE = 2V IC [A], COLLECTOR CURRENT 1.2 IC [A], COLLECTOR CURRENT 14 16 IB = 6mA IB = 5mA IB = 4mA 0.8 1.2 1.0 0.8 0.6 0.4 0.2 0.0 IB = 3mA IB = 2mA 0.4 IB = 1mA 0.0 0 2 4 6 8 10 12 0.0 0.4 0.8 1.2 1.6 VCE [V], COLLECTOR-EMITTER VOLTAGE VBE[V], SATURATION VOLTAGE Figure 1. Static Characteristics Figure 2. Base-Emitter On Voltage 10000 10 hFE, DC CURRENT GAIN 1000 VCE(sat) [V], SATURATION VOLTAGE VCE = 2V IC = 50 IB 1 100 0.1 10 1 1 10 100 1000 10000 0.01 1 10 100 1000 10000 IC[mA], COLLECTOR CURRENT IC [mA], COLLECTOR CURRENT Figure 3. DC Current Gain Figure 4. Collector-Emitter Saturation Voltage 10 1.6 IC MAX. (Pulse) 10ms IC [A], COLLECTOR CURRENT IC MAX. (DC) 1 PC [W], POWER DISSIPATION 100ms 1ms 1.2 1s M ou nt 0.8 ed on Ce ra m ic 0.1 Bo a rd 0.4 (2 5 VCEO MAX. 0m m 2 x Ta = 25 C Single Pulse 0.01 0.1 1 10 o 0. 8m m ) 150 200 0.0 100 0 50 o 100 VCE [V], COLLECTOR-EMITTER VOLATGE TA [ C], AMBIENT TEMPERATURE Figure 5. Safe Operating Area Figure 6. Power Derating (c)2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC2883 Typical Characteristics (Continued) 10 1.6 IC MAX. (Pulse) 10ms 1ms IC [A], COLLECTOR CURRENT PC [W], POWER DISSIPATION 1.2 ou M IC MAX. (DC) 1 100ms ed nt on Ce m ra 0.8 ic a Bo rd 50 (2 0.1 Ta = 25 C Single Pulse Mounted on Ceramic Board 2 (250 mm x 0.8 mm) 0.01 0.1 o 0.4 No m m Hea 2 t Sin x k m 8m 0. ) 0.0 1 10 100 0 50 o 100 150 200 VCE [V], COLLECTOR-EMITTER VOLTAGE TA [ C], AMBIENT TEMPERATURE Figure 7. Safe Operating Area Figure 8. Power Derating (c)2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC2883 Package Dimensions SOT-89 4.50 0.20 1.65 0.10 C0.2 (0.50) 1.50 0.20 (0.40) 0.20 2.50 0.50 0.10 1.50 TYP 1.50 TYP 0.40 0.10 0.40 +0.10 -0.05 (1.10) 4.10 0.20 Dimensions in Millimeters (c)2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST(R) FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R) VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2002 Fairchild Semiconductor Corporation Rev. I1 |
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